September 22 2011

Curriculum Vitae

An explicit (i.e. lengthy) and inornate (i.e. tedious) overview of ZHOU Tao

 

Contact:

Please contact me via this page.

 

Education:

Nov. 2010 –

Commissariat à l’Energie Atomique et aux Energies Alternatives de Grenoble (CEA-G)

in association with Joseph-Fourier University (UJF)

PhD in Physics (to be obtained)

Training through Research Contract (CFR – Contrat de formation par la recherche)

Sep. 2008 – Sep. 2010

Ecole National Supérieur des Mines de Saint Etienne (ENSM-SE)

Engineer in Microelectronics (Ingénieur Civil des Mines – ICM)

Final Year ECTS : 4.92/5

Sep. 2009 – Sep. 2010

Ecole National Supérieur des Mines de Saint Etienne (ENSM-SE)

in association with Provence University – Paul Cezanne University – etc.

Master of Research in Nanoelectronics (Master 2 Recherche Minelec)

Final Mark : 18.78/20

Sep. 2004 – Aug. 2008

Shanghai Jiao Tong University (SJTU)

Bachelor major in Microelectronics

Feb. 2006 – Aug. 2008

Shanghai Jiao Tong University (SJTU)

Bachelor minor in Mathematics and Applied Mathematics

 

Student Projects:

Mar. 2010- Sep. 2010 (Third Year Internship / Thesis Work for Engineering and Master Degree)

CEA-Grenoble/INAC/SP2M/NRS (Nanostructure and Synchrotron Radiation Laboratory)

ESRF (European Synchrotron Radiation Facility) / beamline 32

Installation and Test Runs of the UHV-CVD System on BM32 (ESRF) / Study of the Dislocation Network at Si/Si Interface formed by Wafer Bonding using Synchrotron X-ray Diffraction *

Oct. 2009- Mar. 2010 (Industrial Project)

ST-Microelectronics – Centre Interdisciplinaire de Nanoscience de Marseille (CINAM) – ENSM-SE

Study and fabrication of a thermoelectric device made of Si/Ge superlattice

Mai. 2009- Sep. 2009 (Second Year Internship)

CEA-Grenoble/INAC/SP2M/NRS (Nanostructure and Synchrotron Radiation Laboratory)

ESRF (European Synchrotron Radiation Facility) / beamline 32

Study of the (2×N) Surface Reconstruction of the Ge/Si(001) Wetting Layer using Grazing Incidence Synchrotron X-Ray Diffraction (GIXD) *

Feb. 2008- Aug. 2008 (Thesis Work for Bachelor Degree in Microelectronics)

Department of Microelectronics, Shanghai Jiao Tong University

Numerical Simulation of Die Sensitized Solar Cell (DSSC) based on Regular NanoTube Structure

Feb. 2008- Aug. 2008 (Thesis Work for Bachelor Degree in Mathematics and Applied Mathematics)

Department of Mathematics and Applied Mathematics, Shanghai Jiao Tong University

Dimension Estimation and Plotting of the Invariant Sets of some Iterated Function System

Jun. 2007- Aug. 2008 (Internship)

Department of Microelectronics, Shanghai Jiao Tong University

Implementation of a Reduced Instruction Set Computing (RISC) system and a VGA based application on FPGA

Jan. 2007- Jan. 2008 (Participate in Research Programme PRP Project)

Centre of Instrumental Analysis, Shanghai Jiao Tong University

Measurement of the structure of MOSFET at micron level using SEM

 

Awards:

Sep. 2010 : Special Mention (Mention spéciale) at ENSM-SE

Sep. 2010 : First of the Class (Major de Promotion) for the engineering degree (ICM)

Sep. 2010 : First of the Class (Major de Promotion) for the Master Degree (Master MINELEC)

 

Language Skills:

Chinese : Native tongue

English : Fluent

French : Good Working Knowledge

 

Professional Skills:

Programming Languages : CS, PythonS, C++I, FortranB, VBB

Modeling Languages : UMLB, SysMLB

Hardware Description Languages : VHDLI, VerilogI

Softwares (Microelectronics) : ISEI, EDKI (Xilinx), HspiceI (Synopsys), VirtuosoI (Cadence), ModelSimI (Mentor Graphics), AtlasI, AthenaI (Silvaco)

Softwares (Others): MatlabS, Pro/IIB

Environment (Others): Windows, Cygwin, Linux

S : Skilled
I : Intermediate level
P : Basic